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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT Module 6MBI100S-060 MS5F 5327
Fuji Electric Co.,Ltd. Matsumoto Factory
Jan. 27 '03 Y.Kobayashi Jan. 27 '03 T.Miyasaka
T.Fujihira
K.Yamada
MS5F5327
1 13
H04-004-07
Revised Records
Date
Classification
Ind.
Content
Applied date
Drawn
Checked
T.Miyasaka
Approved
Jan.- 27 - '03
enactment
Issued date
K.Yamada
T.Fujihira
MS5F5327
2
13
H04-004-06
6MBI100S-060
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
21(P) 13(P)
1(Gu) 2(Eu)
5(Gv) 6(Ev) 19(U)
9(Gw) 10(Ew) 17(V) 15(W)
3(Gx) 4(Ex) 20(N)
7(Gy) 8(Ey)
11(Gz) 12(Ez) 14(N)
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3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Ic Ic pulse -Ic -Ic pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage
(*1) (*2)
Conditions
Maximum Ratings 600 +-20 100 200 100 200 400 150 -40~ +125
Units V V A
Continuous 1ms 1ms 1 device
Pc Tj Tstg Viso
W C C V Nm
AC : 1min.
2500 3.5
Mounting Screw Torque
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Symbols ICES IGES VGE = VCE = Conditions 0 V, 0 V, 20 V, 15 V 100 A 0V 10 V 1 MHz 300 V 100 A +-15 V 24 ohm 100 A 100 A Tj = Tj = trr IF = 25 C 125 C VCE = VGE = Ic = Tj = Tj = 600 V +-20 V 100 mA 25 C 125 C Characteristics min. typ. Max. 5.5 IF = 7.8 2.15 2.3 10000 1600 1100 0.45 0.25 0.08 0.40 0.05 1.95 1.8 1.0 200 8.5 2.6 1.2 0.6 1.0 0.35 2.7 0.3 us V us pF Units mA nA V V
VGE(th) VCE = VCE(sat) VGE = Ic = Cies Coes Cres ton tr tr(i) toff tf VF VGE = VCE = f= Vcc = Ic = VGE = RG =
5. Thermal resistance characteristics Items Thermal resistance (1 device) Contact Thermal resistance Symbols Rth(j-c) Rth(c-f) IGBT FWD Conditions Characteristics min. typ. Max. 0.31 0.70 C/W Units
0.05 with Thermal Compound (*) * This is the value which is defined mounting on the additional cooling fin with thermal compound.
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6. Indication on module
6MBI100S-060
100A 600V
Lot No.
Place of manufucturing
7. Applicable category This specification is applied to IGBT Module named
8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time

90%
0V
L
0V V GE trr Irr
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling
Packing box
Material : Cardboad
Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
Display
* Each modules are packed with electrical static protection.
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11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration Test methods and conditions Pull force : 20N Test time : 101 sec. Screw torque : 2.5 ~ 3.5 Nm (M5) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 51sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 853 Relative humidity : 855% Test duration : 1000hr. Test temp. : 121 Atmospheric pressure : 2.03x10 Pa (Reference value) Test duration : 20hr. Test temp. : Low temp. -40 High temp. 125
+3 -5 +5 -5 5
Reference Acceptnorms Number ance EIAJ of sample number ED-4701 A - 111 Method 1 A - 112 Method 2 A - 121 5 5 5 (1:0) (1:0) (1:0)
Mechanical Tests
4 Shock
A - 122
5
(1:0)
5 Solderabitlity
A - 131
5
(1:0)
6 Resistance to Soldering Heat
A - 132
5
(1:0)
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker
B - 111 B - 112 B - 121
5 5 5
(1:0) (1:0) (1:0)
B - 123
5
(1:0)
Environment Tests
5 Temperature Cycle
B - 131
5
(1:0)
Dwell time Number of cycles 6 Thermal Shock Test temp.
RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
B - 141
5
(1:0)
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Acceptnorms Number ance EIAJ of sample number ED-4701 D - 313 5 (1:0)
+0
Test temp. Bias Voltage Bias Method
Endurance Tests
Test duration 2 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 125 -5 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
+0
D - 323
5
(1:0)
3 Intermitted Operating Life (Power cycle) ( for IGBT )
: Ta = 125 -5 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=1005 deg Tj 150 , Ta=255 : 15000 cycles
D - 322
5
(1:0)
Failure Criteria
Failure criteria Lower limit Upper limit Electrical Leakage current ICES USLx2 characteristic IGES USLx2 Gate threshold voltage VGE(th) LSLx0.8 USLx1.2 Saturation voltage VCE(sat) USLx1.2 Forward voltage VF USLx1.2 VGE Thermal IGBT USLx1.2 or VCE resistance VF FWD USLx1.2 Visual inspection Isolation voltage Visual inspection Peeling Plating and the others Viso Broken insulation The visual sample Item Characteristic Symbol Unit mA A mA V V mV mV Note
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categories Reference Number Number norms of test of failure EIAJ ED-4701 sample sample A - 111 Method 1 A - 112 Method 2 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias 2 High temperature Reverse Bias ( for gate ) 3 Intermitted Operating Life (Power cycling) ( for IGBT ) D - 322 5 0 B - 131 B - 141 D - 313 D - 323 5 5 5 5 0 0 0 0 B - 123 5 0 A - 121 A - 122 A - 131 A - 132 B - 111 B - 112 B - 121 5 5 5 5 5 5 5 0 0 0 0 0 0 0 5 0 5 0
Test items
1 Terminal Strength (Pull test) 2 Mounting Strength
Endurance Tests
Environment Tests
Mechanical Tests
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250
[ Inverter ] C olle ct or cur rent vs. Collector-Emitte r volt age Tj= 25 (ty p.)
250
[ Inv erter ] C olle ctor current vs. Collector-Emitte r voltage Tj= 125 (typ.)
VGE= 2 0V
1 5V
1 2V
VGE= 2 0V
1 5V
1 2V
200
[ A] [ A]
200
Ic
150
Ic Coll ecto r cu rren t :
150
Coll ecto r cu rren t :
100
100
1 0V
50
1 0V
50
0 0 1 2 3 : VCE 4 [ V] 5 Col lect or - Emi tter vol tage
0 0 1 2 3 : VCE 4 [ V] 5 Col lect or - Emi tter vol tage
[ Inverter ] C olle ct or cur rent vs. Collector-Emitte r volt age VGE=15V (typ.)
250 10
[ Inverter ] C ollector-Emitter voltage vs. Ga te-Emitter vo ltage Tj= 25 (ty p.)
Tj= 25
Tj= 125
200
[ A]
[ V] : VCE Col lect or - Emi tter vol tage
8
Ic
150
6
Coll ecto r cu rren t :
100
4
Ic=20 0A
50
2
Ic=10 0A Ic= 5 0A
0 0 1 2 : 3 VCE [ V] 4 Col lect or - Emi tter vol tage
0 5 10 15 : VGE 20 [ V] 25 Ga te - Emi tter vol tage
Capacitance
50 000
[ I nverte r ] vs . Col lector -Emitt er voltage (typ.) VGE =0V, f= 1MHz , Tj= 25
500
[ Inverte r ] Dynamic G ate charge (typ.) Vcc=300V, Ic=100A, Tj= 25
25
[ pF ]
[ V]
: C ies, Coe s, C res
VCE
:
10 000
Ci es
Col lect or - Emi tter vol tage
5 000
200
10
C apac itan ce
100
5
1 000
Co es Cr es
500 0 5 10 15 20 : 25 VCE 30 [ V] 35 Col lect or - Emi tter vol tage
0 0 100 200 Gat e ch arge 300 : Qg 400 [ nC ] 500
0 600
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Ga te - Emi tter vol tage
:
300
15
VGE
[ V]
400
20
100 0
[ Inverter ] Switching time vs. Collector curren t (typ .) Vcc=300V, VGE=15V, Rg =24, Tj= 25
100 0
[ I nverter ] Switchi ng tim e vs. Collector current (typ .) Vcc=300V, VGE =15V , Rg= 24, Tj= 125
[ n sec ]
[ n sec ]
ton toff tr
ton toff tr
: t on, t r, t off, tf
10 0
: t on, t r, t off, tf
10 0
tf
tf
Swit chin g ti me
10 0 50 10 0 : Ic 15 0 [A ] 20 0 C olle ctor curr ent
Swit chin g ti me
10 0 50 10 0 : Ic 15 0 [A ] 20 0 C olle ctor curr ent
[ Inverter ] Switching time vs. Gate resistanc e (typ .) Vcc=300V, Ic=100A , VGE= 15V, Tj= 25
500 0 10
[ I nverter ] Switching los s vs. Coll ector curren t (typ.) V cc=300 V, VGE =15V , Rg=24
ton toff tr
[ m J/pu lse ]
[ n sec ]
125 Eon
8
100 0
125 Eoff
: t on, t r, t off, tf
Eo n, Eo ff, Err
Eon 25
6
S witc hing los s :
10 0
4
25 Eoff
tf
Swit chin g ti me
2
125 Err
Err 25
10 10 Gate resi stan ce
0 10 0 : Rg [ ] 30 0 0 50 10 0 : Ic 15 0 [A ] 20 0 C olle ctor curr ent
[ I nvert er ] Switching loss vs. G ate re sistan ce (typ .) Vcc=30 0V, Ic =100A, VGE=15V, Tj= 125
20 25 0
[ Inverter ] Reverse bias safe opera ting ar ea + VGE=15 V, -VGE15V, Rg24, Tj125
[ m J/pu lse ]
Eon
20 0
Eo n, Eo ff, Err
: Ic
Eoff
[A ]
15 0
15
Coll ector cur rent
30 0
10
10 0
S witc hing los s :
5
50
Err
0 10 Gate resi stan ce 10 0 : Rg [ ]
0 0 20 0 40 0 60 0 : V CE [V ] 80 0 Coll ecto r - Emit ter v olta ge
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[ Inverte r ] Fo rward curren t vs. Forwar d on vol tage (typ.)
250 300
[ Inverte r ] Reverse recovery cha ra cteris tics (typ.) Vcc= 300V, VGE=15V, Rg=24
: Irr [ A ] tr r [ nse c ]
200
Tj=125 Tj=25
[ A]
trr125
100
Irr125 trr25 Irr25
Fo rwar d cu rren t :
IF
150
100
50
0 0 1 F orwa rd o n vo ltag e : 2 VF [ V] 3
Reve rse reco very cur rent Reve rse reco very tim e :
10 0 50 100 IF
150 [ A]
200
Fo rwar d cu rren t :
Transient therma l resistance
5
Rth (j-c ) [ / W ]
1
FW D
IGB T
T herma l re sist anse
:
0.1 0 .01 0. 001
0 .01 Puls e wi dth : Pw
0.1 [ se c ]
1
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT6M3947) (No.: MT6M3947) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem.
- According to the outline drawing, select proper length of screw for main terminal.
Longer screws may break the case. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 100mm100um10um - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity.
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Cautions
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
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